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This paper reviews and analyzes two reported image-rejection (IR) low-noise amplifier (LNA) design techniques based on CMOS technology, i.e., the second-order active notch filer and third-order passive notch filter. The analyses and discussions are based on the quality factor of filters and the ability of the frequency control. As the solution to deal with(More)
  • Nam-Jin Oh
  • 2014
This paper proposes a novel phase-noise (PN) reduction technique for high performance voltage-controlled oscillator (VCO) using a cross-coupled series LC resonator, rather than parallel LC resonator. While the series connected inductor and capacitor enhances the fundamental frequency swing at the LC connection node, it gives a cleaner spectral purity output(More)
  • Nam-Jin Oh
  • 2011
A low-power switchable quad-band CMOS LNA for PCS(1.8 GHz), WCDMA(2.1 GHz), WiBro(2.3 GHz), and LTE(2.6 GHz) applications is presented. The proposed LNA has an advantage of occupying less chip area compared to other concurrent topology which uses more inductors by adopting LC tank resonators. Also, it consumes less current compared to other topology which(More)
This paper represents a low noise, high gain image rejection low noise amplifier (IR-LNA) used in the superheterodyne architecture. The proposed IR-LNA is implemented by integrating the low noise, high gain LNA with the proposed third order active notch filter, which is optimized for 5.25 GHz WLAN with IF frequency of 500 MHz applications. The measurement(More)
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