Nak Hee Seong

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As technology scaling poses a threat to DRAM scaling due to physical limitations such as limited charge, alternative memory technologies including several emerging non-volatile memories are being explored as possible DRAM replacements. One main roadblock for wider adoption of these new memories is the limited write endurance, which leads to wear-out related(More)
Phase change memory (PCM) is an emerging memory technology for future computing systems. Compared to other non-volatile memory alternatives, PCM is more matured to production, and has a faster read latency and potentially higher storage density. The main roadblock precluding PCM from being used, in particular, in the main memory hierarchy, is its limited(More)
Memory bandwidth has become a major performance bottleneck as more and more cores are integrated onto a single die, demanding more and more data from the system memory. Several prior studies have demonstrated that this memory bandwidth problem can be addressed by employing a 3D-stacked memory architecture, which provides a wide, high frequency memory-bus(More)
There are several emerging memory technologies looming on the horizon to compensate the physical scaling challenges of DRAM. Phase change memory (PCM) is one such candidate proposed for being part of the main memory in computing systems. One salient feature of PCM is its multi-level-cell (MLC) property, which can be used to multiply the memory capacity at(More)
There are several emerging memory technologies looming on the horizon to compensate the physical scaling challenges of DRAM. Phase change memory (PCM) is one of such candidates proposed for being part of the main memory in computing systems. One salient feature of PCM is its multi-level cell (MLC) property which can be used to multiply the memory capacity(More)
As DRAM scaling becomes more challenging and its energy efficiency receives a growing concern for data center operation, an alternative approach— stacking DRAM die with thru-silicon vias (TSV) using 3-D integration technology is being undertaken by industry to address these looming issues. Furthermore, 3-D technology also enables heterogeneous die stacking(More)
As scaling DRAM cells becomes more challenging and energy-efficient DRAM chips are in high demand, the DRAM industry has started to undertake an alternative approach to address these looming issues—that is, to vertically stack DRAM dies with through-silicon-vias (TSVs) using 3-D-IC technology. Furthermore, this emerging integration technology also makes(More)
......Given the grim prospect of technology scaling in flash memories and dynamic RAM (DRAM), designers are seeking alternative memory technologies to continue the prophecy of Moore’s law for memories. Among them, phase-change memory (PCM) has shown the most promise. Unfortunately, PCM faces serious challenges of reliability and usability if we cannot(More)
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