Nadine Collaert

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We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge(More)
This work analyzes the radio frequency (RF) performance of 60-nm gate length finFETs, for which the DC behavior exhibits reduced SCE. The RF analysis is carried out as a function of the gate length as well as the fin width (W<sub>fin</sub>). Cut off frequencies (f<sub>t</sub>, f <sub>max</sub>) on the order of 100 GHz are reported for the first time. It is(More)
Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them(More)
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed(More)
To cope with the growing needs in research towards the understanding of cellular function and network dynamics, advanced micro-electrode arrays (MEAs) based on integrated complementary metal oxide semiconductor (CMOS) circuits have been increasingly reported. Although such arrays contain a large number of sensors for recording and/or stimulation, the size(More)
We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states(More)
R. Rahman*, G. P. Lansbergen, J. Verduijn, 3 G. C. Tettamanzi, 3 S. H. Park, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge 3 Advanced Device Technologies, Sandia National Laboratories, Albuquerque, NM 87185, USA Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands Centre for(More)
Abstract—We study RTN and PBTI in nanoscale InGaAs FinFETs fabricated on 300mm Si wafers. The average instability is found to be comparable to planar structures, but significantly larger when compared to Si devices. Although the novel devices follow the same time-dependent variability statistics and the corresponding area-scaling as their Si counterparts, a(More)
The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter(More)