Nabhan Khatib

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This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-°oating-gate technique (BD-QFG). This technique leads to signi¯cant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low(More)
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