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- Publications
- Influence
Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
- M. Kondo, N. Sugii, +8 authors I. Yoshida
- Materials Science
- IEEE Transactions on Electron Devices
- 30 November 2006
A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were… Expand
Effective control of flat-band voltage in HfO2 gate dielectric with La2O3 incorporation
- K. Okamoto, M. Adachi, +5 authors H. Iwai
- Materials Science
- ESSDERC - 37th European Solid State Device…
- 1 September 2007
The origin of negative flat-band shift using La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> dielectrics has been extensively examined. From careful extraction of effective work function… Expand
Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage
- M. Kondo, N. Sugii, +7 authors I. Yoshida
- Materials Science
- IEEE Transactions on Electron Devices
- 24 April 2006
Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and… Expand
High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure
- M. Kondo, N. Sugii, +8 authors I. Yoshida
- Materials Science
- IEEE InternationalElectron Devices Meeting…
- 5 December 2005
We applied a strained-Si/relaxed-SiGe structure to LDMOSFETs in order to improve the power-added efficiency (PAE) of cellular handset RF power amplifier applications. Our LDMOSFETs were fabricated in… Expand
La-based oxides for high-k gate dielectric application
- P. Ahmet, K. Kakushima, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Materials Science
- 8th International Conference on Solid-State and…
- 1 October 2006
Thermal stability of rare earth oxides La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that… Expand
Impact of annealing ambient for La2O3/Si capacitor
- K. Tuokedaerhan, T. Kaneda, +8 authors H. Iwai
- 2011
E-mail: kamal.t.aa@m.titech.ac.jp Introduction La2O3 is regarded as one of the most promising candidate gate dielectric material for further EOT (equivalent oxide thickness) scaling in the future LSI… Expand
Control of Flat Band Voltage by Partial Incorporation of La 2 O 3 or Sc 2 O 3 into HfO 2 in Metal / HfO 2 / SiO 2 / Si MOS Capacitors
- M. Adachi, K. Okamoto, +5 authors H. Iwai
- 2007
High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained… Expand
A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer
- M. S. Hadi, S. Kano, +8 authors H. Iwai
- 2014
Introduction Resistive memory has been considered as one of the most promising candidate to replace flash memory as high capacity nonvolatile memory technology [1]. It may be even more suitable for… Expand
Interface Reaction Control by Gate Metal Selection for Improving Thermal Stability of La2O3-gated InGaAs MOS Capacitors
- D. H. Zadeh, Y. Suzuki, +7 authors H. Iwai
- 2012
Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs K.Noguchi
- K. Noguchi, W. Hosoda, +7 authors H. Iwai
- 2008
We investigated the modulation of Schottky barrier height (Φb) by inserting Er layer between Si (100) substrate and Ni layer before the silicidation annealing. Φb for electrons of NiSi was decreased… Expand