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Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs wereExpand
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Effective control of flat-band voltage in HfO2 gate dielectric with La2O3 incorporation
The origin of negative flat-band shift using La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> dielectrics has been extensively examined. From careful extraction of effective work functionExpand
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Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage
Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile andExpand
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High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure
We applied a strained-Si/relaxed-SiGe structure to LDMOSFETs in order to improve the power-added efficiency (PAE) of cellular handset RF power amplifier applications. Our LDMOSFETs were fabricated inExpand
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La-based oxides for high-k gate dielectric application
Thermal stability of rare earth oxides La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed thatExpand
Impact of annealing ambient for La2O3/Si capacitor
E-mail: kamal.t.aa@m.titech.ac.jp Introduction La2O3 is regarded as one of the most promising candidate gate dielectric material for further EOT (equivalent oxide thickness) scaling in the future LSIExpand
Control of Flat Band Voltage by Partial Incorporation of La 2 O 3 or Sc 2 O 3 into HfO 2 in Metal / HfO 2 / SiO 2 / Si MOS Capacitors
High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were containedExpand
A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer
Introduction Resistive memory has been considered as one of the most promising candidate to replace flash memory as high capacity nonvolatile memory technology [1]. It may be even more suitable forExpand
Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs K.Noguchi
We investigated the modulation of Schottky barrier height (Φb) by inserting Er layer between Si (100) substrate and Ni layer before the silicidation annealing. Φb for electrons of NiSi was decreasedExpand