N. K. N. Bhushan

Suggest Changes
We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
The present work discusses the electrostatic integrity of Insulated Shallow Extension Silicon On Void (ISESOV) MOSFET examine by calculating the 2D potential in the channel region using Poisson's(More)
  • 1