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Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy.
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak,
Visible and UV coherent Raman spectroscopy of dipicolinic acid.
  • D. Pestov, M. Zhi, M. Scully
  • Chemistry, Physics
    Proceedings of the National Academy of Sciences…
  • 18 October 2005
TLDR
By exciting vibrational coherence on more than one mode simultaneously, a quantum beat signal is observed that can be used to extract the parameters of molecular motion in DPA and will lead to a technique for real-time detection of spores.
Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules.
TLDR
Simultaneous chemical vapor deposition of graphene and "in-situ" phosphorous or boron doping of graphene was accomplished using Triphenylphosphine and 4-Methoxyphenylboronic acid to lead to an easy and rapid production of modified large area graphene.
Water properties under nano-scale confinement
TLDR
The observed systematic effects of nano-scale confinement on the physical properties of water are driven by alterations to water’s hydrogen-bonding network—influenced by water interactions with the silica surface — and has implications for how to understand the chemical andphysical properties of liquids confined in porous materials.
Oxidation of ultrathin GaSe
Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions
Role of humidity in oxidation of ultrathin GaSe
The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via
Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy
Nanometer germanium islands in epitaxial layers of silicon are obtained by molecular-beam epitaxy. The dimensions and shapes of the islands are determined in an atomic-force microscope. The
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