Claim Your Author Page
Ensure your research is discoverable on Semantic Scholar. Claiming your author page allows you to personalize the information displayed and manage publications (all current information on this profile has been aggregated automatically from publisher and metadata sources).
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary… Continue Reading
A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to be a fast, high density, nonvolatile memory that can enhance the performance of a variety of applications,… Continue Reading
A low power 1 Mb Magnetoresistive Random Access Memory (MRAM) based on a 1-Transistor and 1-Magnetic Tunnel Junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration… Continue Reading
With the recent sampling of Everspin Technologies spin torque magnetoresistive random access memory (ST-MRAM), the performance gap between the high speed volatile memories of SRAM and DRAM and the… Continue Reading
A 4 Mbit Magnetoresistive Random Access Memory (MRAM) with a new magnetic switching mode is described. The memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) bit cell. The 4… Continue Reading
We review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world,… Continue Reading
The area-dependence of spin-transfer resonance in giant magnetoresistance (GMR) contacts from 50-300 nm diameter d is measured in this paper. With increasing d , a decreasing slope df/dl of… Continue Reading
A low power 4Mb Magnetoresistive Random Access Memory (MRAM) with a new magnetic switching mode is presented for the first time. The memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction… Continue Reading
In this paper, we have studied the switching characteristics of patterned synthetic anti-ferromagnetic (SAF) element for application as a free layer in magnetic random access memory (MRAM).