N. Yahyaoui

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We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained Al x Ga 1−x N/In 0.1 Ga 0.9 N/Al x Ga 1−x N quantum wells embedded in relaxed n-Al 0.15 Ga 0.85 N/strained In 0.1 Ga 0.9 N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not(More)
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