N. Yahyaoui

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We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained AlxGa1−xN/In0.1Ga0.9N/AlxGa1−xN quantumwells embedded in relaxed n-Al0.15Ga0.85N/strained In0.1Ga0.9N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not preclude achieving a(More)
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