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Chickpea (Cicer arietinum) is the second most widely grown legume crop after soybean, accounting for a substantial proportion of human dietary nitrogen intake and playing a crucial role in food security in developing countries. We report the ∼738-Mb draft whole genome shotgun sequence of CDC Frontier, a kabuli chickpea variety, which contains an estimated(More)
The disease of CRMO is a "great clinical and radiologic mimic. There are no specific clinical or laboratory findings and no pathognomonic imaging or pathologic features have been described. Because the disease is not well known by clinician, radiologist, and pathologist alike, it is likely to be more common than the literature implies. It has been suggested(More)
We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify the physical origins of these endurance failures. A physically-based optimized switching mode is developed to improve the endurance of TMO-RRAM. A significantly enhanced endurance of &#x003E;10<sup>9</sup> switching(More)
This paper introduces a new device architecture, which can be shared by a variety of different types of transistors including a new 3D junctionless N-channel and P-channel vertical slit FET (VeSFET). VeSFETs have two symmetrical independent gates that provide many new circuit level opportunities e.g. in energy conservation domain, unavailable otherwise. The(More)
This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic(More)
This letter presents a vertical gate-all-around silicon nanowire transistor on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50: 1) vertical nanowires with diameter ~20 nm are achieved from lithography and dry-etch defined Si-pillars with subsequent oxidation. The surrounding gate length is controlled using etch(More)
In this paper, we explain the concept, characteristics &amp; need of Big Data &amp; different offerings available in the market to explore unstructured large data. This paper covers Big Data adoption trends, entry &amp; exit criteria for the vendor and product selection, best practices, customer success story, benefits of Big Data analytics, summary and(More)
Fully CMOS compatible silicon-nanowire (SiNW) gate-all-around (GAA) n- and p-MOS transistors are fabricated with nanowire channel in different crystal orientations and characterized at various temperatures down to 5K. SiNW width is controlled in 1 nm steps and varied from 3 to 6 nm. Devices show high drive current (2.4 mA/mum for n-FET, 1.3 mA/mum for(More)
This letter presents a high-speed silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cell in gate-all-around Si-nanowire (NW) architecture, which is fabricated by using a top-down process technology. The NW cell exhibits faster program and erase (P/E) speed compared to the corresponding planar device; 1 mus for programming and 1 ms for erasing(More)
The low-frequency noise (LFN) in the subthreshold region of both n- and p-type gate-all-around silicon nanowire transistors (SNWTs) is investigated. The measured drain-current noise spectral density shows that the LFN in this regime can be well described by the mobility-fluctuation model due to the volume-inversion conduction behavior, and the Hooge(More)