N. Sengouga

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In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of(More)
In this work, the authors discuss the design of two low noise amplifiers (LNA) based on 1µm gate-length pHEMT InP transistors and using two different topologies. Designed for radio astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB(More)
In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB(More)
In this paper, we report a detailed numerical study of the electron irradiation effect on the photoelectrical parameters of a GaAs based p(+)-n-n(+) solar cell which operates under an AM0 solar spectrum. As a consequence of irradiation different types of defects are created in the semiconductor lattice. These defects introduce energy levels in the gap of(More)
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