N. Sengouga

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— In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30(More)
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