N.R. Ibrahim

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We report on 100-nm channel-length thin-film transistors (TFTs) that are fabricated using germanium-seeded lateral crystallization of amorphous silicon. Germanium seeding allows the fabrication of devices with control over grain boundary location. Its effectiveness improves with reduced device geometry, allowing "single-grain" device fabrication. In the(More)
We present a new diffusion simulation methodology which has been developed as part of our BackEnd Simulation Tool (BEST) effort. This approach uses the finite element method to address issues critical for modeling polycrystalline materials at the mesoscopic scale. We have included separate grain and grain boundary diffusion, spatially continuous material(More)
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