N. Mestres

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(2015) Integration of functional complex oxide nanomaterials on silicon. The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications which can be produced at large scale. This review uncovers the main strategies that are successfully(More)
This Letter presents a solution for locating hot spots in active integrated circuits (IC) and devices. This method is based on sensing the phase lag between the power periodically dissipated by a device integrated in an IC (hot spot) and its corresponding thermal gradient into the chip substrate by monitoring the heat-induced refractive index gradient with(More)
The effects of lifetime engineering processes in fast recovery power diodes are measured by using an internal IR-laser deflection (IIR-LD) set-up. To evidence the local lifetime killing effects on such devices, a comparison between the measured physical parameters of irradiated and unirradiated diodes, free-carrier concentration and their decay time, is(More)
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