N. E. Elashkar

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In this paper, the dependence of the instantaneous memristance value and its I–V characteristics on a periodic signal phase are studied. Hence, expression for the instantaneous memristance as a function of the periodic input phase is derived. This derivation is based on the memristor linear dopant drift model and is provided for sinusoidal input waveforms.(More)
This paper investigates memristor based demodulators and proposes new circuit designs for Binary Frequency Shift Keying (BFSK) and circular 8-Quadrature Amplitude Modulation (QAM) demodulators using two memristors at most. The proposed designs consider utilizing the unique features of the memristor element, crucially, its variable average memristance with(More)
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