N. D. Theodore

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It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process.(More)
Aluminum and copper are widely used for microelectronic interconnect applications. Interfacial oxides can cause device performance degradation and failure by significantly increasing electrical resistance. Interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks were studied using Transmission Electron Microscopy (TEM) combined with Energy Dispersive(More)
Growth of thin crystals on external substrate surfaces by many different methods is a well-known technique, but its extension to inner, enclosed surfaces of large defects in monocrystalline materials has not yet been reported. The literature on thin film growth and defects in materials can be leveraged to fabricate new structures for a variety of(More)
Aluminum and copper interconnects are widely used for microelectronic applications. A problem can arise when interfacial oxides are present. Such oxides can significantly degrade device performance by increasing electrical resistance. This paper describes analyses of interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks. The analyses were performed(More)
Silicon oxide used as an intermetal dielectric (IMD) incorporates oxide impurities during both its formation and subsequent processing to create vias in the IMD. Without a sufficient degassing of the IMD, oxide impurities released from the IMD during the physical vapor deposition (PVD) of the glue layer of the vias had led to an oxidation of the glue layer(More)
A novel ultraviolet photochemical method was used to prepare TiO<sub>2</sub> resistive-switching films. Amorphous TiO<sub>2</sub> films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 &#x00B0;C. A Pt/TiO<sub>2</sub>/ITO/PET device was then fabricated to investigate(More)
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