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A low power 1Mb Magnetoresistive Random Access Memory (MRAM) based on a 1-Transistor and 1-Magnetic Tunnel Junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, MTJ elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high(More)
Magnetoresistive Random Access Memory (MRAM) technology emerged from research and development into volume production within the last decade in the form of Toggle MRAM. The latest Magnetic Tunnel Junction (MTJ) based memory technology, Spin-Torque MRAM, has reached the level of customer sampling, offering higher density and bandwidth. Spin-Torque MRAM(More)
A 4 Mbit Magnetoresistive Random Access Memory (MRAM) with a new magnetic switching mode is described. The memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) bit cell. The 4 Mbit MRAM circuit was designed in a five level metal, 0.18 /spl mu/m CMOS process with a bit cell size of 1.55 /spl mu/m/sup 2/. A new cell architecture, bit(More)
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