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A low power 1Mb Magnetoresistive Random Access Memory (MRAM) based on a 1-Transistor and 1-Magnetic Tunnel Junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, MTJ elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high(More)
  • N. Rizzo, J. -M. Scherrmann, C. Padoin, S. Palombo, C. Girre
  • 1996
Objectives: Claims that substituted benzimidazole molecules induce cytochromes P4501A2 are still controversial. This study was undertaken to evaluate their inducing potency under conventional therapeutic conditions. Methods: Twelve healthy non-smoking young volunteers were given 20 mg omeprazole or 30 mg lansoprazole daily, in random order, for 2 weeks,(More)
A 4 Mbit Magnetoresistive Random Access Memory (MRAM) with a new magnetic switching mode is described. The memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) bit cell. The 4 Mbit MRAM circuit was designed in a five level metal, 0.18 /spl mu/m CMOS process with a bit cell size of 1.55 /spl mu/m/sup 2/. A new cell architecture, bit(More)
Magnetoresistive Random Access Memory (MRAM) technology emerged from research and development into volume production within the last decade in the form of Toggle MRAM. The latest Magnetic Tunnel Junction (MTJ) based memory technology, Spin-Torque MRAM, has reached the level of customer sampling, offering higher density and bandwidth. Spin-Torque MRAM(More)
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