N. A. Zakhleniuk

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We present a general one-dimensional (1D) macroscopic analytical theory of the transport effects in typical heterolaser diodes including carrier injection, carrier heating in the active region and leakage currents. The theory includes all key processes and parameters and defines the bottlenecks responsible for injection efficiency and vertical carrier(More)
GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP)(More)
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