Mykola V Sopinskyy

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Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the(More)
The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in(More)
The structural-phase transformations induced by air annealing of SiO x and SiO x  < Er,F > films were studied by the combined use of infrared spectroscopy and ellipsometry. The films were prepared using vacuum evaporation of SiO powder and co-evaporation of SiO and ErF3 powders. The annealing took place at moderate temperatures (750 and 1000 °C). It was(More)
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