A division-of-amplitude photopolarimeter that uses a parallel-slab multiple-reflection beam splitter was described recently [Opt. Lett. 21, 1709 (1996)]. We provide a general analysis and an optimization of a specific design that uses a fused-silica slab that is uniformly coated with a transparent thin film of ZnS on the front surface and with an opaque Ag… (More)
We present novel designs and fabrication of ultra-compact coupler and 1×2 splitter using plasmonic waveguides. The coupling efficiency is 88% for the former one and 45% for each branch for the latter one.
We present a novel design of two nano-scale plasmonic devices: a 2×2 directional coupler switch and a Mach-Zehnder interferometer. The overall efficiency was 37% for the former one and 70% for the latter one.
Novel design and fabrication steps of an ultracompact 1×2 plasmonic splitter are presented. The proposed splitter operates at broad frequency range. The theoretical result at 1550 nm is approximately 25% for each branch.
Silicon microring vertical couplers are proposed and fabricated to efficiently couple light into silicon-on-insulator waveguides for silicon photonic integration. A specific mode is excited to match the effective index of the silicon-on-insulator guided mode by oblique incidence. The vertical leakage from the microring forms gradual coupling into the… (More)
Using a square lattice to reduce the cross talk between two photonic crystal structures composed of silicon pillars in air and air holes in silicon shows a reduction of-90.60 dB and-30 dB, respectively.
In this paper we characterize the photoluminescence spectra of Erbium doped Yttrium oxide and propose a design for making a low quality factor on chip laser with this material. 1. Introduction There has been great progress in realizing CMOS compatible silicon lasers recently, such as the demonstration of Raman and erbium doped silica Microdisk lasers [1,… (More)
Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50µm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 1. Introduction Several silicon electro-optic modulators have recently been demonstrated. However, all of them are inherently narrowband… (More)