Mustafa A. G. Abushagur

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In this paper we characterize the photoluminescence spectra of Erbium doped Yttrium oxide and propose a design for making a low quality factor on chip laser with this material. 1. Introduction There has been great progress in realizing CMOS compatible silicon lasers recently, such as the demonstration of Raman and erbium doped silica Microdisk lasers [1,(More)
Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50µm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 1. Introduction Several silicon electro-optic modulators have recently been demonstrated. However, all of them are inherently narrowband(More)
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