Muhammad Tauseef Rab

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A new methodology for improving memory repair is presented which can be applied in either manufacture time repair or built-in self-repair (BISR) scenarios. In traditional memory repair, one spare column can only replace one column containing a defective cell. However, the proposed method allows a single spare column to be used to repair multiple defective(More)
Three-dimensional (3D) technology makes it possible to organize memories as cell arrays stacked on logic where upper die layers contain the cell arrays and the bottom layer implements the peripheral logic. This creates new degrees of freedom that can be exploited to optimize the use of spare rowslcolumns to maximize yield This paper proposes a new idea that(More)
— One way to organize 3-D memories is cell arrays stacked on logic where the upper die layers contain the cell arrays and the bottom layer implements the peripheral logic. A new degree of freedom exists when constructing 3-D memories, which is that the order of the die in the stack can be selected. This paper proposes a new idea that exploits this(More)
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