Muhammad A. Alam

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Negative bias temperature instability (NBTI) has become one of the major causes for reliability degradation of nanoscale circuits. In this letter, we propose a simple analytical model to predict the delay degradation of a wide class of digital logic gate based on both worst case and activity dependent threshold voltage change under NBTI. We show that by(More)
Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for(More)
The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and(More)
Recent advances in experimental techniques (on-thefly and ultrafast techniques) allow measurement of threshold voltage degradation due to negative-bias temperature instability (NBTI) over many decades in timescale. Such measurements over wider temperature range (−25 ◦C to 145 ◦C), film thicknesses (1.2–2.2 nm of effective oxide thickness), and processing(More)
Despite tremendous potential of highly sensitive electronic detection of biomolecules by nanoscale biosensors for genomics and proteomic applications, many aspects of experimentally observed sensor response (S) are difficult to understand within isolated theoretical frameworks of kinetic response or electrolyte screening. In this paper, we combine analytic(More)
Gate-modulated transport through partially aligned films of single-walled carbon nanotubes (SWNTs) in thin film type transistor structures are studied experimentally and theoretically. Measurements are reported on SWNTs grown by chemical vapor deposition with systematically varying degrees of alignment and coverage in transistors with a range of channel(More)
Among the remarkable variety of semiconducting nanomaterials that have been discovered over the past two decades, single-walled carbon nanotubes remain uniquely well suited for applications in high-performance electronics, sensors and other technologies. The most advanced opportunities demand the ability to form perfectly aligned, horizontal arrays of(More)
The origins of gate-induced hysteresis in carbon nanotube fi eld-effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modifi ed processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep-rate(More)
We present a MoS2 biosensor to electrically detect prostate specific antigen (PSA) in a highly sensitive and label-free manner. Unlike previous MoS2-FET-based biosensors, the device configuration of our biosensors does not require a dielectric layer such as HfO2 due to the hydrophobicity of MoS2. Such an oxide-free operation improves sensitivity and(More)