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The system of partial differential equations which forms the basic semiconductor equations together with appropriate boundary conditions cannot be solved explicitly in general. Therefore, the solution must be calculated by means of numerical approaches. Finite Element Analysis (FEA) is a computer simulation technique used in engineering analysis with… (More)
A change of technology from Si to SiC will revolutionize the power electronics. In this paper, the switching simulation, 4H-SiC GTO thyristor is presented and tested numerically by predicting its performance using the 2-D simulator developed in this project. We calculate turn-off time and loss of SiC GTO thyristor using 2-dimensional device simulation.