Mu-Tien Chang

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Large last-level caches (L 3 Cs) are frequently used to bridge the performance and power gap between processor and memory. Although traditional processors implement caches as SRAMs, technologies such as STT-RAM (MRAM), and eDRAM have been used and/or considered for the implementation of L 3 Cs. Each of these technologies has inherent weaknesses: SRAM is(More)
Gain cell memories feature high speed, low power, and high density, which are suitable for SoC designs. In this paper, low power techniques to reduce leakage currents for 2T1D gain cell memory array are presented. For each memory cell, p-type gated diode storage device is applied. In addition, footer power gating and foot driver are applied on each memory(More)
—Ever-growing application data footprints demand faster main memory with larger capacity. DRAM has been the technology choice for main memory due to its low latency and high density. However, DRAM cells must be refreshed periodically to preserve their content. Refresh operations negatively affect performance and power. Traditionally, the performance and(More)
First-in first-out (FIFO) memories are widely used in SoC for data buffering and flow control. In this paper, a robust ultra-low power asynchronous FIFO memory is proposed. With self-adaptive power control and complementary power gating techniques, leakage power of the FIFO memory array is minimized. Moreover, with the proposed dual-V T 7T SRAM cell, the(More)
—To gain higher density and lower leakage, STT-RAM has been considered an alternative to SRAM for implementing last-level caches (LLCs). However, STT-RAM requires high write energy to program. Consequently, frequent write-backs from the upper-level caches or cache fills from the main memory will result in high LLC power. Both the broadcast and write-back(More)
Large last-level cache (L 3 C) is efficient for bridging the performance and power gap between processor and memory. Several memory technologies, including SRAM, STT-RAM (MRAM), and embedded DRAM (eDRAM), have been used or considered as the technology to implement L 3 Cs. However, each of them has inherent weaknesses: SRAM is relatively low density and(More)
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