Mu-Chang Luo

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Homoepitaxial growth of unintentional doped, nitrogen (N) doped n-type, and boron (B) doped p-type 4H-SiC epilayers on off-oriented n-type and semi-insulating Si-face (0001) substrates was performed in a horizontal hot-wall chemical vapor deposition (HW-CVD) reactor with SiH <sub>4</sub> and C<sub>2</sub>H<sub>4</sub> at temperature of 1500 degC and(More)
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