Motoki Murakami

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The tolerance of RF ICs against on-chip inband interferers is diagnosed from the viewpoints of the quality of wireless channels compliant with LTE standards. The on-chip interferers inevitably propagate from other active circuits like digital backend processors through silicon substrate coupling in the same die of systemlevel integration. An in-system(More)
Substrate noise coupling in RF receiver front end circuitry for LTE wireless communication was examined by full-chip level simulation and on-chip measurements, with a demonstrator built in a 65 nm CMOS technology. A complete simulation flow of full-chip level substrate noise coupling uses a decoupled modeling approach, where substrate noise waveforms drawn(More)
In-band interferers in wireless communication channels are due to the high order harmonics of multiple clock frequencies used by baseband digital signal processing in a single-chip solution. The impacts of in-band spurious tones on wireless performance are explored with hardware-in-the-loop simulation (HILS) of the LTE compliant systems. RF receiver(More)
A long term evolution (LTE)-class CMOS radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip is developed in our project for the next generation cell phone handsets in order to clarify the on-chip-level noise coupling and demonstrate the noise attenuation using the soft magnetic thin film as an on-chip electromagnetic noise(More)
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