Motohiro Ikeda

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Two pin -n and one n-inn silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the pin -n and the n-inn in high resistivity wafers , and the pin -n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-inn and the pin -n detectors, which suggested that the signals(More)
Large area (63.6 mm x 64 mm) n-on-n silicon strip detectors have been fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beamtests. The beamtests showed that the individual p-stop structure collected less charge in the region between the strips than other p-stop structures. Large area(More)
Although the phenomena related to the multiphase flow can be found in many kinds of industrial and engineering applications, the physical mechanism of the multiphase flow has not been investigated in detail. The major reason for the lack of data in the multiphase flow lies in the difficulties in measuring the flow quantities of the multiple phases(More)
A Silicon microstrip detector with n-strip readout on the n-bulk Silicon has been fabricated by implementing 4 different p-stop structures in 6 zones in the detector's n-side. The detectors were assembled into the units of detector-electronics modules. The response difference in the p-stop structures and effect of detector strip length were characterized in(More)
We have found that, for Si dots individually charged with a few electrons or holes, characteristic potential profiles with a dimple around the center of the charged Si dot are observed and can be interpreted in terms of the Coulomb repulsion among the charges retained in the dot. By an introduction of Ge core in Si dots, holes can be well-confined in the Ge(More)
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