Motohiro Ikeda

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We have found that, for Si dots individually charged with a few electrons or holes, characteristic potential profiles with a dimple around the center of the charged Si dot are observed and can be interpreted in terms of the Coulomb repulsion among the charges retained in the dot. By an introduction of Ge core in Si dots, holes can be well-confined in the Ge(More)
Although the phenomena related to the multiphase flow can be found in many kinds of industrial and engineering applications, the physical mechanism of the multiphase flow has not been investigated in detail. The major reason for the lack of data in the multiphase flow lies in the difficulties in measuring the flow quantities of the multiple phases(More)
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