Mostafa Said

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This paper presents the design, design and simulates a single stage LNA circuit with high gain and low noise using NPN Epitaxial for frequency range of 2.4GHz. The design simulation process is using Advance Design Simulation (ADS) and performance of each microwave receiver there is Low Noise Amplifier (LNA) circuit. This amplifier exhibits a quality factor(More)
3D integration is an emerging technology that overcomes 2D integration process limitations. The use of short Through-Silicon Vias (TSVs) introduces a significant reduction in routing area, power consumption, and delay. Though, there are still several challenges in 3D integration technology need to be addressed. It is shown in literature that reducing TSV(More)
One of main challenges of 3D-integration is the area overhead which has two main causes: first the huge TSV diameter which is usually in the range of microns, and the second reason is the Keep-Out-Zone (KOZ) overhead due to the high induced thermal stresses during fabrication. The area overhead besides the fabrication process itself inversely affects the(More)
Three-dimensional (3D) integration using through-silicon vias (TSVs) offers advantages over traditional 2D integration, however there are still several challenges originated from stacking dies. The main challenges in 3D-ICs are the large area overhead of the TSVs, low yield due to stacking several dies, and the increased cost of fabrication. In this paper a(More)
The analysis of dielectric constant of pharmaceutical medicines at microwave frequency is presented in this paper. The dielectric constant also known as the permittivity was measured by using open-ended coaxial probe technique over the microwave frequency range from 400Mhz to 4GHz. The samples of two pharmaceutical medicines were prepared at different(More)
This paper describes the design of Low-pass filter using bowtie Defected Ground Structure (DGS). The designing of low-pass filter begins from lumped element in which the filter will be built using capacitors and inductors before converted to open and short circuited stub. The low-pass filter using bowtie Defected Ground Structure (DGS) is required to(More)
This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio(More)
This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field(More)
In this paper, presented an array of 2 × 2 UWB Bowtie antennas for Ultra Wide Band (UWB) mobile communication is being proposed. The antenna designs have been simulated using CST Microwave Studio. The antenna covers the UWB spectrum from 4.0 to 10.6 GHz, and had a return loss below than 10 dB throughout the entire band. A compact antenna area of 56.4(More)