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Three-dimensional integrated circuit (3D IC) with through-silicon-via (TSV) is believed to offer new levels of efficiency, power, performance, and form-factor advantages over the conventional 2D IC. However, 3D IC involves disruptive manufacturing technologies compared to conventional 2D IC. TSVs cause significant thermomechanical stress that may seriously(More)
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1-4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at(More)
We describe the design and analysis of 3D-MAPS, a 64-core 3D-stacked memory-on-processor running at 277 MHz with 63 GB/s memory bandwidth, sent for fabrication using Tezzaron's 3D stacking technology. We also describe the design flow used to implement it using industrial 2D tools and custom add-ons to handle 3D specifics.
Low power is widely considered as a key benefit of 3D ICs, yet there have been few thorough design studies on how to maximize power benefits in 3D ICs. In this paper, we present design methodologies to reduce power consumption in 3D ICs using a large-scale commercial-grade microprocessor (OpenSPARC T2). To further improve power benefits in 3D ICs on top of(More)
—With the extensive research on through-silicon-via (TSV) and die-stacking technology from both academia and industry, mainstream production of 3D ICs is expected in a near future. However, power delivery is believed to be one of the most challenging problems in 3D ICs. A main objective of the 3D power/ground (P/G) network optimization is to minimize the(More)
Low power is considered by many as the driving force for 3D ICs, yet there have been few thorough design studies on how to reduce power in 3D ICs. In this paper, we discuss design methodologies to reduce power consumption in 3D IC designs using a commercial-grade CPU core (OpenSPARC T2 core). To demonstrate power benefits in 3D ICs, four design techniques(More)
In this work, we propose an efficient and accurate full-chip thermo-mechanical stress and reliability analysis framework. To the best of our knowledge this is the first such system which enables full-chip stress simulation as compared to existing commercial Finite Element Analysis (FEA) tools which can only simulate very small cross-sections at a time. Our(More)
—This paper describes the architecture, design, analysis, and simulation and measurement results of the 3D-MAPS (3D massively parallel processor with stacked memory) chip built with a 1.5 V, 130 nm process technology and a two-tier 3D stacking technology using 1.2 μ-diameter, 6 μ-height through-silicon vias (TSVs) and μ-diameter face-to-face bond pads.(More)
— In this work, we study the through-silicon-via (TSV) RC variation impact on 3D power delivery network (PDN). First, we model TSV RC variation due to process variation. Then, we perform sign-off power supply noise analysis of 3D PDN in GDSII layouts which contain power/ground (P/G) TSV RC variation model. We explore the effect of TSV RC variation range,(More)
In this work, we propose an efficient and accurate full-chip through-silicon-via (TSV) interfacial crack analysis flow and design optimization methodology to alleviate TSV interfacial crack problems in 3D ICs. First, we analyze TSV interfacial crack at TSV/dielectric liner interface caused by TSV-induced thermo-mechanical stress. Then, we explore the impact(More)