Moon J. Kim

Learn More
The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC sub-strates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 °C. Drain bias of 40 V and time-zero(More)
Objectives The objective of the Master of Science (MS) degree in materials science and engineering is to provide intensive preparation for the professional practice in modern materials science by those engineers and scientists who wish to continue their education. Courses are offered at times and locations convenient for the student who is employed on a(More)
This paper describes a simple and versatile method for growing highly anisotropic nanostructures of Pd, single-crystal nanobars bounded by {100} facets and single-crystal nanorods with their side surfaces enclosed by {100} and {110} facets. According to thermodynamic arguments, Pd atoms should nucleate and grow in a solution phase to form cuboctahedrons of(More)
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum(More)
Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance(More)
We demonstrate lithographically fabricated Si nanowire field effect transistors (FETs) with long Si nanowires of tiny cross sectional size (∼3-5 nm) exhibiting high performance without employing complementarily doped junctions or high channel doping. These nanowire FETs show high peak hole mobility (as high as over 1200 cm(2)/(V s)), current density, and(More)
This paper describes a layer-by-layer epitaxial approach to the synthesis of multishelled nanocrystals composed of alternating shells of Pd and Pt by starting with seeds made of Pd or Pt nanocrystals. The synthesis was conducted by sequentially adding PtCl(4)(2-) and PdCl(4)(2-) salt precursors into a system containing either Pd or Pt seeds (in the shape of(More)
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we(More)
Ti-Nb-based Gum Metals exhibit extraordinary superelasticity with ultralow elastic modulus, superior strength and ductility, and a peculiar dislocation-free deformation behavior, most of which challenge existing theories of crystal strength. Additionally, this kind of alloys actually displays even more anomalous mechanical properties, such as the non-linear(More)
A novel multifunctional Pt nanoparticle@PPy nanofiber intercalated structure (Pt NP@PPy NF) has been synthesized facilely in one-pot. Pt NPs, with size and facet control, were nicely assembled and embedded into the polymer nanofiber network. Polyvinylpyrrolidone (PVP) was used during the synthesis process which would assist the self-assembly of the metal(More)