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The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 C. Drain bias of 40 V and time-zero drain(More)
This paper describes a simple and versatile method for growing highly anisotropic nanostructures of Pd, single-crystal nanobars bounded by {100} facets and single-crystal nanorods with their side surfaces enclosed by {100} and {110} facets. According to thermodynamic arguments, Pd atoms should nucleate and grow in a solution phase to form cuboctahedrons of(More)
DICE1 (deleted in cancer 1), first identified in human lung carcinoma cell lines, is a candidate tumor suppressor, but the details of its activity remain largely unknown. We have found that RNA interference of its C. elegans homolog (DIC-1) produced inviable embryos with increased apoptosis, cavities in cells and abnormal morphogenesis. In the dic-1(RNAi)(More)
In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates(More)
We demonstrate lithographically fabricated Si nanowire field effect transistors (FETs) with long Si nanowires of tiny cross sectional size (∼3-5 nm) exhibiting high performance without employing complementarily doped junctions or high channel doping. These nanowire FETs show high peak hole mobility (as high as over 1200 cm(2)/(V s)), current density, and(More)
PURPOSE To describe two cases of bacterial keratitis with atypical mycobacteria after laser in situ keratomileusis (LASIK). METHODS Two cases of non-tuberculous mycobacterial keratitis occurred in the interface between the stromal bed and flap, 20 days and 14 days after LASIK. The keratitis progressed slowly and worsened after attempts were made to remove(More)
Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without(More)
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as(More)
PURPOSE To determine the effect of suction duration on corneal flap thickness and incision angle of the cut margin created by a microkeratome in a porcine eye. METHODS Thirty porcine eyes were randomly assigned to three groups according to different suction duration: group 1 (10 sec), group 2 (35 sec), and group 3 (60 sec). The Hansatome microkeratome(More)
Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We(More)