Montassar Najari

Suggest Changes
Learn More
This paper presents a computationally efficient physics-based compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). This compact model includes a new(More)
In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation(More)
  • 1