Momcilo M. Pejovic

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This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and(More)
Response of pMOS dosemeters during two successive irradiations with gamma-ray irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been studied. The response was followed on the basis of threshold voltage shift, determined from transfer characteristics, as a function of absorbed dose or annealing time. It was shown that the(More)
The paper describes dose response and signal fading of Al-gate p-channel (metal oxide semiconductor field effect transistors) MOSFETs in the range of gamma radiation doses used in radiation therapy. MOSFETs with thicknesses of the gate oxide layer of 1 μm and 400 nm were used. The response was characterized by the threshold voltage shift and was studied as(More)
– Experimental data of mean values of breakdown voltage b U of CITEL and SIEMENS gas-filled surge arresters (GFSA) obtained for voltage increase rates k=1-10 V/s with discretyzed dynamic method are presented in the paper. It has been shown that) (k f U b = data are fitted very well by a straight line. The values of static breakdown voltage, which have been(More)
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