Mohsin Aziz

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The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant.(More)
—In modern communication systems, nonlinearity in power amplifiers (PAs) and in-phase and quadrature-phase (I/Q) imperfections in the transmitter are of enormous concern. With the increase in the importance for highly energy efficient and low complexity models, there is a need to develop low complexity digital predistortion (DPD) methods. In this paper, we(More)
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