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We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO 2 gate oxide. HfO 2 layers were prepared by two different methods: anodic oxidation and sol–gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol–gel deposited oxide films were obtained following an(More)
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