Mohd Sofian Alias

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The paper presented comprehensive theoretical design study and experimental fabrication of long wavelength GaInNAs edge-emitting laser diode. The theoretical results reveals that optimal GaInNAs active region and device structure are acquired, where high material gain near 1.3 μm and precise optical mode confinement are obtained. Room temperature(More)
In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved(More)
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