Mohammad Al-Amin

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The reaction of 2-alkynyl-1-azaspiro[2.3]hexanes with a platinum catalyst is described. 1,4,5,6-Tetrahydrocyclopenta[b]pyrroles having a variety of substituents were conveniently synthesized via a cascade cyclization/ring-expansion process.
An improved process for the preparation of sulfur-modified gold-supported palladium material [SAPd, second generation] is presented. The developed preparation method is safer and generates less heat (aqueous Na2S2O8 and H2SO4) for sulfur fixation on a gold surface, and it is superior to the previous method of preparing SAPd (first generation), which(More)
A conformationally restricted privileged structure library with stereochemical diversity for a "fragment growth" methodology comprising 90 compounds was designed and systematically and efficiently synthesized using sulfur-modified Au-supported Pd (SAPd)-catalyzed ligand-free Suzuki-Miyaura coupling of vinyl iodide promoted by microwave and subsequent(More)
In this present study, waste prawn shell was used as raw material for chitosan preparation. Various analytical tools e.g. Fourier-transform infrared spectroscopy (FT-IR), x-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed for the characterization of prepared chitosan. Thermogravimetric analysis (TGA) and differential scanning(More)
A sulfur-modified gold-supported palladium material (SAPd) has been developed bearing palladium nanoparticles on its surface. Herein, we report for the first time the use of SAPd to affect a Pd-nanoparticle-catalyzed 1,7-Pd migration reaction for the synthesis of benzotriazoles via C-H bond activation. The resulting benzotriazoles were evaluated in terms of(More)
We have performed a comprehensive study into low temperature ( 500 °C) internal gettering in multicrystalline silicon (mc-Si). Two groups of as-grown mc-Si wafers from different ingot height positions were subjected to the same thermal treatments with surface passivation by either silicon nitride (SiNx:H) or a temporary iodine-ethanol (I-E) chemical(More)
Annealing at 500 °C changes minority carrier lifetime in as-grown multicrystalline silicon substantially. Part of the change arises from internal gettering of impurities, but surface passivation for lifetime measurement results in additional effects. We report experiments that aim to clarify the role of passivation. Long-term annealing (up to 60 h) is(More)
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