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The paper deals with the diffusion limit of the initial-boundary value problem for the multi-dimensional semiconductor Boltzmann-Poisson system. Here, we generalize the one dimensional results obtained in [6] to the case of several dimensions using global renormalized solutions. The method of moments and a velocity averaging lemma are used to prove the… (More)

The paper deals with the diffusion approximation of the Boltzmann equation for semiconductors in the presence of spatially oscillating electrostatic potential. When the oscillation period is of the same order of magnitude as the mean free path, the asymptotics leads to the Drift-Diffusion equation with a homogenized electrostatic potential and a diffusion… (More)

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