Mohamed E. Chaibi

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—A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70 • C to +70 • C) without the need(More)
We report system simulation and experimental results on enhanced transmission distance over standard single mode fiber thanks to a novel dual modulation technique that generates a wideband optical single side band orthogonal frequency division multiplexing (OSSB-OFDM) signal using a low-cost, integrated , dual RF access electro-absorption modulated laser.(More)
  • N Jebbor, S Bri, A M Sánchez, M Chaibi
  • 2013
The work of this article is a contribution to the characterization of new materials at microwave frequencies and enrichment the existing database. The transmission/reflection technique for complex permittivity determination is employed to characterize a set of low-loss dielectric materials. The algorithm for permittivity extraction eliminates mathematically(More)
The work of this article is a contribution to the characterization of new materials at microwave frequencies and enrichment of the existing database. The transmission/reflection technique for complex permittivity determination is employed to characterize a set of low-loss dielectric materials. The algorithm for permittivity extraction eliminates(More)
To characterize a sedimentary environment, it is risky to take a single sample when the spatial variability is unknown. A reference station has to reflect the natural variations in order to allow the creation of long time series. However, it can remain unclear whether the temporal changes are real or due to a spatial variation. We highlight here the(More)
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