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Under radio-frequency operation of MOSFETs, not only conventional 1-V characteristics and their derivatives but also higher-order phenomena have to be modeled accurately for reliable circuit performance prediction. To reproduce such critical device characteristics model development tends to follow device physics as much as possible. The surface-potential(More)
We have developed a high-frequency noise model for short channel MOSFETs by considering the position dependent surface potential which results in a non-uniform mobility distribution along the channel. The chosen approach successfully reproduces the induced-gate noise and the cross-correlation noise between drain and gate for short channel MOSFETs without(More)
Carrier dynamics in a MOSFET channel under fast time-varying gate input is included in the modeling for circuit simulation and implemented in SPICE3f5 at only 7% increased computational runtime cost. Correct reproduction of transient drain currents as well as harmonic-distortion characteristics are verified. While the carrier dynamics under low-frequency(More)
We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise(More)
We studied the effects of the phase and intensity of multiple coil currents in a wireless power transfer system using resonant magnetic coupling. Resonant magnetic coupling is regarded as one of the most promising methods for mid-range wireless charging systems. For mid-range charging, the charging device can assume various positions and postures, and some(More)
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