Mitsunori Atsuta

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A blocking layer to decrease the dark current of BiI/sub 3/ X-ray detector was studied by depositing BiOI film on BiI/sub 3/ film. The quality of the BiI/sub 3/ film was evaluated by X-ray diffraction and photoluminescence. The carrier transport characteristics were evaluated by Hall measurement. The BiI/sub 3/ film was n-type and the BiOI film was p-type.(More)
A high voltage transistor and an Insulated Gate Bipolar Transistor (IGBT) were fabricated by using Silicon-wafer Direct Bonding (SDB) technique to study the effect of direct bonded interface on power device characteristics. Prior to the device fabrication, heat treatment condition of SDB was investigated, and it was confirmed that electrically and(More)
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