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Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 10(14) synapses, makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. To provide comparable complexity while operating much faster and with(More)
Information and communication technology (ICT) is now calling for solutions enabling lower power consumption, further miniaturization, and multifunctionality requiring the development of new device concepts and new materials. [ 1 ] One of the most fertile approaches to meet such demands is spintronics, which is now facing the challenge of evolving from the(More)
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and(More)
A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.
Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cognitive tasks require spiking neuromorphic networks, which explicitly model individual neural pulses ("spikes")(More)
Nanoparticles (NPs) embedded in a conductive or insulating matrix play a key role in memristors and in flash memory devices. However, the role of proximity to the interface of isolated NPs has never been directly observed nor fully understood. Here we show that a reversible local switching in tunnel conductivity can be achieved by applying an appropriate(More)
Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex(More)
We experimentally demonstrate classification of 4×4 binary images into 4 classes, using a 3-layer mixed-signal neuromorphic network (" MLP perceptron "), based on two passive 20×20 memristive crossbar arrays, board-integrated with discrete CMOS components. The network features 10 hidden-layer and 4 output-layer analog CMOS neurons and 428 metal-oxide(More)
b) c) Top Electrode Bottom Electrode Top domains Bottom domains Middle Domain a) Co LSMO Co LSMO Low Resistance High resistance The Fig.4a shows the spin valve presented previously in Fig.1 before any higher voltage was applied-this corresponds to the lowest resistance state and a SVMR of 22%. Next, we apply a voltage bias of-1.5 V and the device resistance(More)