Mireille Mouis

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An accelerated algorithm for the resolution of the coupled Schrödinger/Poisson system, with open boundary conditions, is presented. This method improves the subband decomposition method (SDM) introduced in [N. Ben Abdallah, E. Polizzi, Subband decomposition approach for the simulation of quantum electron transport in nanostructures, The principal feature of(More)
Semiconductor nanowires (NWs) have been researched as the building blocks for various nanosensors and devices, such as strain sensors, [ 1,2 ] photodetectors, [ 3 ] biosensors, [ 4 ] and gas sensors. [ 5 ] In recent years, wurtzite semiconductor NWs, such as ZnO, have been extensively investigated due to their piezoelectric properties. [ 6 ] With(More)
A numerical method for the resolution of the two dimensional Schrodinger equation with an incoming plane wave boundary condition is proposed and applied to the simulation of ultrashort channel double gate MOSFETs. The method relies on the decomposition of the wave function on subband eigenfunctions. The 2-D Schrodinger equation is then equivalent to a(More)
This paper investigates the mobility extraction from channel magnetoresistance, which is widespreading as a powerful experimental method to study transport in short gate devices. A fully self-consistent Monte Carlo device simulator is used to simulate the influence of a transverse magnetic field on electron transport in nanometer scale devices. After(More)
—We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrödinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt(More)
Process optimization for 3D sequential integration of FDSOI CMOS transistors Low temperature (LT) process is gaining interest in the frame of 3D sequential integration where limited thermal budget (<650 ºC) is needed for top FET to preserve bottom FET from any degradation and also in the standard planar integration for achieving ultra-thin EOT and work(More)
We present; a numerical method to simulate quantum transport in silicon ultrashort channel MOSFET (DGFET). The considered model is ballistic rind consists in solving Schrodinger equations with quantum transmitting boundary conditions, coupled to the Poisson equation for the electrostatic potential. There is an enormous amount of work dedicated to numerical(More)
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