Mireille Mouis

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An accelerated algorithm for the resolution of the coupled Schrödinger/Poisson system, with open boundary conditions, is presented. This method improves the subband decomposition method (SDM) introduced in [N. Ben Abdallah, E. Polizzi, Subband decomposition approach for the simulation of quantum electron transport in nanostructures, J. Comp. Phys. 202(More)
Semiconductor nanowires (NWs) have been researched as the building blocks for various nanosensors and devices, such as strain sensors, [ 1,2 ] photodetectors, [ 3 ] biosensors, [ 4 ] and gas sensors. [ 5 ] In recent years, wurtzite semiconductor NWs, such as ZnO, have been extensively investigated due to their piezoelectric properties. [ 6 ] With(More)
A numerical method for the resolution of the two dimensional Schrodinger equation with an incoming plane wave boundary condition is proposed and applied to the simulation of ultrashort channel double gate MOSFETs. The method relies on the decomposition of the wave function on subband eigenfunctions. The 2-D Schrodinger equation is then equivalent to a(More)
scale metal oxide semiconductor field effect transistors Karim Huet, Damien Querlioz, Wipa Chaisantikulwat, Jérôme Saint-Martin, Arnaud Bournel, Mireille Mouis, and Philippe Dollfus Institut d’Electronique Fondamentale (IEF), UMR CNRS, Univ. Paris Sud, Orsay 91405, France STMicroelectronics, 850 rue Jean Monnet, Crolles 38920, France Institut de(More)
We present; a numerical method to simulate quantum transport in silicon ultrashort channel MOSFET (DGFET). The considered model is ballistic rind consists in solving Schrodinger equations with quantum transmitting boundary conditions, coupled to the Poisson equation for the electrostatic potential. There is an enormous amount of work dedicated to numerical(More)
We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent PoissonSchrödinger algorithm within the real-space non equilibrium Green’s function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential autocorrelation law. In order to simulate rough planar structures we adopt(More)