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In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1]. However, the memory cell size of STT-MRAM reported so far is still over 1µm 2 , and the memory capacity is(More)
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