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Reduced graphene oxide–carbon nanotube (RGO–CNT) hybrid materials were prepared by a simple catalyst-free route. The thermostability, photoluminescence (PL) and electrical properties of RGO–CNTs were investigated systematically. The results revealed that compared to RGO, RGO–CNTs showed multicolor PL, and higher thermostability and conductivity. The(More)
The specific π-π interactions between curved and planar structures, which are different from the general π-π interactions between planar arenes, have generated great attention due to their brand-new, unique, and fascinating photoelectric properties. Herein, the curved-planar (C-P) π-π interactions between corannulene, pyrene and coronene have been(More)
We report a green and efficient method for chemoselective deoxidization of graphene oxide via the ultraviolet irradiation catalyzed with 2,2,6,6-tetramethyl-4-piperidinol. While the sp(2)-hybridized oxygen functional groups are removed after the reduction, the epoxy and hydroxyl groups are retained in the chemoselectively reduced graphene oxide (CrGO). The(More)
This paper presents a connectionist approach using back-propagation artificial neural network (BP) and genetic algorithm (GA) to predict the mechanical properties of ceramic die material. This method is using GA to optimize BP, including how to train the initial connection weights of network and to determine the threshold values. In the analysis, mechanical(More)
Most simulations of neuroplasticity in memristors, which are potentially used to develop artificial synapses, are confined to the basic biological Hebbian rules. However, the simplex rules potentially can induce excessive excitation/inhibition, even collapse of neural activities, because they neglect the properties of long-term homeostasis involved in the(More)
Despite remarkable advances in the development of organic field-effect transistor (OFET) memories over recent years, the charge trapping elements remain confined to the critical electrets of polymers, nanoparticles, or ferroelectrics. Nevertheless, rare reports are available on the complementary advantages of different types of trapping elements integrated(More)
We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film.(More)
We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5)(More)
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