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Hydrothermal reactions of solutions containing a vanadate source, an organodiphosphonate, an organonitrogen component, and HF (V/P/O/F) yield a series of oxyfluorovanadium-diphosphonates with(More)
A novel poly-Si field-enhanced nanowire (FEN) TFT memory with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure fabricated simply via a sidewall spacer formation has been presented. The THNVAS(More)
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