Ming-Heng Tsai

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Dislocation stressors in the source and drain build the tensile stress field in the channel of nMOSFET. An analytic model of the strain/stress field induced by the edge dislocation is presented. The model is used for stress optimization of the dislocation stressors in the nMOSFET channel. The accuracy of the model is similar to that of the finite element(More)
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