Ming-Hao Tseng

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This paper reports the highest Q-factor inductor on silicon substrate. A 'local semi-insulating region under the 3pm-thick copper spiral inductor is created by high-energy proton bombardment. For a single-layer spiral 1.5 nH inductor, we obtained Q-factor greater than 25 over broad frequency band from 5-19 GHz and with the highest value being 45. Modeling(More)
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