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The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use(More)
Trade-off between noise figure (NF) and input return loss (RL or |S<sub>11</sub>|) imposes a fundamental limitation on the design of low noise amplifiers (LNA) for ultra-wideband (UWB) applications. A graph-based approach using Smith Chart to achieve optimum values for both NF and input RL over the desired LNA bandwidth is presented. The proposed method and(More)
This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and S-parameters data from single HBTs(More)
We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz(More)
Next-generation high data rate wireless communication systems offer completely new ways to access information and services. To provide higher data speed and data bandwidth, RF transceivers in next-generation communications are expected to offer higher RF performance in both transmitting and receiving circuitry to meet quality of service. Chosen(More)
The reliability and performance of a low-voltage metal-tometal contact shunt RF MEMS switch is investigated. The switch featured is compatible with standard MMIC processing steps. The best rf performance shows insertion loss of less that 0.1 dB and isolation of greater than 22 dB for all frequencies up to 40 GHz. Switching times are less than 25 μs.(More)
We demonstrate a sub-lovolts RF MEM switch built on a semi-insulating GaAs substrate. The fabrication process is a 7-mask-layer process compatible with GaAs MMIC processes. The insertion loss is less than 0.1 dB and the isolation is better than 25 dB over frequencies up to 40 GHz. The MEM switches will provide a solution as a broadband, low voltage building(More)
Describes the design and measured performance of a 40 Gb/s integrated differential PIN+TIA with offset control using InP SHBT technology. The circuit was designed to handle large average optical input power levels (>5 dBm) encountered in short-haul networks where optical gain control may not be available or economical.
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show(More)
This paper reports on the performance of highly reliable dc to 110GHz low-voltage millimeter wave MEMS switches on GaAs and Si. The switch has demonstrated insertion loss less than 6dB and isolation better than 15dB up to 110GHz and a cold switching lifetime greater than 6.9×10 cycles. The design and fabrication methods used to achieve ultra broadband(More)