Mikhail S. Nikitin

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Minimal value of dark current in reverse biased p −n junctions at avalanche breakdown is determined by interband tunneling. For example, tunnel component of dark current be‐ comes dominant in reverse biased p −n junctions formed in a number semiconductor ma‐ terials with relatively wide gap Eg already at room temperature when bias V b is close to avalanche(More)
Recombination of excess (nonequilibrium) electrons and holes in semiconductors through impurity recombination centers (traps) known as trap-assisted (ShockleyRead-Hall) recombination is in many cases the dominant process. In this chapter, we develop the general theory of trap-assisted recombination and study in detail two key characteristics: (1)(More)
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