Mikhail O. Petrushkov

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GaAs films were grown with molecular beam epitaxy (MBE) method on Si substrates defected from plane (001) at 6° towards [110]. GaAs films were grown both on the Si surface terminated by As atoms and(More)
An inverted GaAs solar cell structure has been grown with the MBE method. Together with the substrate, the structure was glued to a polymer film of polyethylene terephthalate (PET film) by means of(More)
GaAs films were grown with molecular beam epitaxy (MBE) method on Si substrates defected from plane (001) at 6° towards [110]. The processes of epitaxial layers nucleation and growth were controlled(More)
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